Modeling And Characterization Of Rf And Microwave Power Fets
Transcript Of Modeling And Characterization Of Rf And Microwave Power Fets
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
MODELING AND CHARACTERIZATION OF RF AND MICROWAVE POWER FETS
This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification, and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years’ device modeling experience in LDMOS and III–V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors.
A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III–V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community.
All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. P e t e r H . A a e n is Modeling Group Manager; J a i m e A . P l a´ is Design Organization Manager; and J o h n Wo o d is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
The Cambridge RF and Microwave Engineering Series
Series Editor Steve C. Cripps, Hywave Associates
Peter Aaen, Jaime Pla´ and John Wood, Modeling and Characterization of RF and Microwave Power FETs
Dominique Schreurs et al., RF Power Amplifier Behavioral Modeling Sorin Voinigescu and Timothy Dickson, High-Frequency Integrated Circuits J. Stephenson Kenney, RF Power Amplifier Design and Linearization Allen Podell and Sudipto Chakraborty, Practical Radio Design Techniques Paul Young, RF and Microwave Networks: Measurement and Analysis Dominique Schreurs, Microwave Techniques for Microelectronics
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
MODELING AND CHARACTERIZATION OF RF AND MICROWAVE POWER FETS
PETER H. AAEN Freescale Semiconductor, Inc
J A I M E A . P LA´ Freescale Semiconductor, Inc
JOHN WOOD Freescale Semiconductor, Inc
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
University Printing House, Cambridge CB2 8BS, United Kingdom
Cambridge University Press is part of the University of Cambridge.
It furthers the University’s mission by disseminating knowledge in the pursuit of education, learning and research at the highest international levels of excellence.
www.cambridge.org Information on this title: www.cambridge.org/9780521870665
© Cambridge University Press 2007
This publication is in copyright. Subject to statutory exception and to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written
permission of Cambridge University Press.
First published 2007 First paperback edition 2011
A catalogue record for this publication is available from the British Library
ISBN 978-0-521-87066-5 Hardback ISBN 978-0-521-33617-8 Paperback
Cambridge University Press has no responsibility for the persistence or accuracy of URLs for external or third-party internet websites referred to in this publication,
and does not guarantee that any content on such websites is, or will remain, accurate or appropriate.
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
To our families: Ljubica & Luka; Sandra, Andrea & Gaby; Gayle, Diane & Audrey.
v
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
Contents
Preface Acknowledgments
1 RF and Microwave Power Transistors 1.1 Introduction 1.2 Outline of the Transistor Modeling Process 1.3 A Review of the Commercial Applications of High-Power Transistors 1.4 Silicon Device Technology Development 1.5 Compound Semiconductor (III–V) Device Technology 1.6 The Basics of FET Operation 1.7 Packages 1.8 Trends and Future Directions Appendix 1.1 References
2 Compact Modeling of High-Power FETs 2.1 Introduction 2.2 Physical Modeling 2.3 Compact Models 2.4 Memory Effects 2.5 Conclusions References
3 Electrical Measurement Techniques 3.1 Introduction 3.2 Electrical Reference Planes 3.3 Measurement Environment 3.4 Measurements for Model Extraction 3.5 Measurements for Validation
page ix xv
1 1 4
6 7 11 17 38 44 46 47
51 51 53 54 61 68 68
71 71 72 85 100 109
vii
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
viii
Contents
References
118
4 Passive Components: Simulation and Modeling
123
4.1 Introduction
123
4.2 Packages
123
4.3 Bondwires
126
4.4 MOS Capacitor Modeling
138
4.5 Example of the Use of Segmentation Techniques
142
References
147
5 Thermal Characterization and Modeling
149
5.1 Introduction
149
5.2 Methods of Heat Transfer
152
5.3 Thermal Measurements
160
5.4 Thermal Simulations
171
5.5 Compact Models
175
References
179
6 Modeling the Active Transistor
183
6.1 Introduction
183
6.2 Modeling the Manifolds and Extrinsic Components
187
6.3 Scaling Considerations
202
6.4 Modeling the Intrinsic Transistor
205
6.5 Including Frequency Dispersive Effects in the Transistor
Model
242
6.6 Including Statistical Variations in the Compact Model 253
6.7 Closing Remarks
256
References
257
7 Function Approximation for Compact Modeling
263
7.1 Introduction
263
7.2 Functions and Function Approximation
265
7.3 Practical Methods for Function Approximation
270
7.4 Conclusions
293
References
294
8 Model Implementation in CAD Tools
297
8.1 Introduction
297
8.2 An Overview of the Various Classes of Simulator
298
8.3 Overview of the Model Implementation Process
307
8.4 Model Verification Process
310
8.5 Types of Model Implementation
312
8.6 Building a Model Library
318
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
Contents
ix
8.7 Portability of Models and Future Trends
320
References
321
9 Model Validation
323
9.1 Introduction
323
9.2 Model Uncertainty and Sources of Error
324
9.3 Validation Criteria for Power Amplifier Design
327
9.4 Validation of the Model Against Measurements
332
References
350
About the Authors
353
Index
357
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
© in this web service Cambridge University Press
www.cambridge.org
MODELING AND CHARACTERIZATION OF RF AND MICROWAVE POWER FETS
This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification, and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years’ device modeling experience in LDMOS and III–V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors.
A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III–V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community.
All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. P e t e r H . A a e n is Modeling Group Manager; J a i m e A . P l a´ is Design Organization Manager; and J o h n Wo o d is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
The Cambridge RF and Microwave Engineering Series
Series Editor Steve C. Cripps, Hywave Associates
Peter Aaen, Jaime Pla´ and John Wood, Modeling and Characterization of RF and Microwave Power FETs
Dominique Schreurs et al., RF Power Amplifier Behavioral Modeling Sorin Voinigescu and Timothy Dickson, High-Frequency Integrated Circuits J. Stephenson Kenney, RF Power Amplifier Design and Linearization Allen Podell and Sudipto Chakraborty, Practical Radio Design Techniques Paul Young, RF and Microwave Networks: Measurement and Analysis Dominique Schreurs, Microwave Techniques for Microelectronics
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
MODELING AND CHARACTERIZATION OF RF AND MICROWAVE POWER FETS
PETER H. AAEN Freescale Semiconductor, Inc
J A I M E A . P LA´ Freescale Semiconductor, Inc
JOHN WOOD Freescale Semiconductor, Inc
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
University Printing House, Cambridge CB2 8BS, United Kingdom
Cambridge University Press is part of the University of Cambridge.
It furthers the University’s mission by disseminating knowledge in the pursuit of education, learning and research at the highest international levels of excellence.
www.cambridge.org Information on this title: www.cambridge.org/9780521870665
© Cambridge University Press 2007
This publication is in copyright. Subject to statutory exception and to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written
permission of Cambridge University Press.
First published 2007 First paperback edition 2011
A catalogue record for this publication is available from the British Library
ISBN 978-0-521-87066-5 Hardback ISBN 978-0-521-33617-8 Paperback
Cambridge University Press has no responsibility for the persistence or accuracy of URLs for external or third-party internet websites referred to in this publication,
and does not guarantee that any content on such websites is, or will remain, accurate or appropriate.
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
To our families: Ljubica & Luka; Sandra, Andrea & Gaby; Gayle, Diane & Audrey.
v
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
Contents
Preface Acknowledgments
1 RF and Microwave Power Transistors 1.1 Introduction 1.2 Outline of the Transistor Modeling Process 1.3 A Review of the Commercial Applications of High-Power Transistors 1.4 Silicon Device Technology Development 1.5 Compound Semiconductor (III–V) Device Technology 1.6 The Basics of FET Operation 1.7 Packages 1.8 Trends and Future Directions Appendix 1.1 References
2 Compact Modeling of High-Power FETs 2.1 Introduction 2.2 Physical Modeling 2.3 Compact Models 2.4 Memory Effects 2.5 Conclusions References
3 Electrical Measurement Techniques 3.1 Introduction 3.2 Electrical Reference Planes 3.3 Measurement Environment 3.4 Measurements for Model Extraction 3.5 Measurements for Validation
page ix xv
1 1 4
6 7 11 17 38 44 46 47
51 51 53 54 61 68 68
71 71 72 85 100 109
vii
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
viii
Contents
References
118
4 Passive Components: Simulation and Modeling
123
4.1 Introduction
123
4.2 Packages
123
4.3 Bondwires
126
4.4 MOS Capacitor Modeling
138
4.5 Example of the Use of Segmentation Techniques
142
References
147
5 Thermal Characterization and Modeling
149
5.1 Introduction
149
5.2 Methods of Heat Transfer
152
5.3 Thermal Measurements
160
5.4 Thermal Simulations
171
5.5 Compact Models
175
References
179
6 Modeling the Active Transistor
183
6.1 Introduction
183
6.2 Modeling the Manifolds and Extrinsic Components
187
6.3 Scaling Considerations
202
6.4 Modeling the Intrinsic Transistor
205
6.5 Including Frequency Dispersive Effects in the Transistor
Model
242
6.6 Including Statistical Variations in the Compact Model 253
6.7 Closing Remarks
256
References
257
7 Function Approximation for Compact Modeling
263
7.1 Introduction
263
7.2 Functions and Function Approximation
265
7.3 Practical Methods for Function Approximation
270
7.4 Conclusions
293
References
294
8 Model Implementation in CAD Tools
297
8.1 Introduction
297
8.2 An Overview of the Various Classes of Simulator
298
8.3 Overview of the Model Implementation Process
307
8.4 Model Verification Process
310
8.5 Types of Model Implementation
312
8.6 Building a Model Library
318
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
Contents
ix
8.7 Portability of Models and Future Trends
320
References
321
9 Model Validation
323
9.1 Introduction
323
9.2 Model Uncertainty and Sources of Error
324
9.3 Validation Criteria for Power Amplifier Design
327
9.4 Validation of the Model Against Measurements
332
References
350
About the Authors
353
Index
357
© in this web service Cambridge University Press
www.cambridge.org
Cambridge University Press 978-0-521-87066-5 - Modeling and Characterization of RF and Microwave Power Fets Peter H. Aaen, Jaime A. Pl´a And John Wood Frontmatter More information
© in this web service Cambridge University Press
www.cambridge.org