New approaches in optical lithography technology for
Transcript Of New approaches in optical lithography technology for
Rochester Institute of Technology
RIT Scholar Works
Theses 5-2005
New approaches in optical lithography technology for subwavelength resolution
Hoyoung Kang
Follow this and additional works at: https://scholarworks.rit.edu/theses Recommended Citation Kang, Hoyoung, "New approaches in optical lithography technology for subwavelength resolution" (2005). Thesis. Rochester Institute of Technology. Accessed from This Dissertation is brought to you for free and open access by RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact [email protected]
NEW APPROACHES IN OPTICAL LITHOGRAPHY TECHNOLOGY FOR
SUBWAVELENGTH RESOLUTION
by Hoyoung Kang
M.S. Hanyang University (1987)
A dissertation submitted in partial fulfillment of the requirements for the degree of Ph.D. in the Chester F. Carson Center for Imaging Science
of the College of Science Rochester Institute of Technology
May 2005
Author Accepted by
HoyoungKang Hoyoung Kang .
CHESTER F. CARLSON CENTER FOR IMAGING SCIENCE
COLLEGE OF SCIENCE ROCHESTER INSTITUTE OF TECHNOLOGY
ROCHESTER, NEW YORK
CERTIFICATE OF APPROVAL
Ph. D. DEGREE DISSERTATION
The Ph.D. Degree Dissertation of Hoyoung Kang has been examined and approved
by the dissertation committee as satisfactory for the dissertation requirement for the Ph.D. degree in Imaging Science
Bruce W. Smith
Dr. Bruce W. Smith, Thesis Advisor
Zoran Ninkov
Dr. Zoran Ninkov
M. Kotlarchyk
Dr. Michael Kotlarchyk
Paul Michaloski
Paul Michaloski,
Date
Thesis/Dissertation Author Permission Statement
Title of thesis or dissertation: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _---;-_ _ __
N eu.l I'>.pproecb 1'0 OptIc 0..0 (!'t-b03k=A.phJ Te.cb'Y>C)lo~ y
Nrumeofauthor: ____H_D~y~o_U__~_~~__~~~~~~~~_ _ _ _ _ _ _ _ _ _ _~_ _ __
Degree:
ph. D
Program: College:
of h1!0%i'llg Se~ e ... r-q
CoUe.g.e
$C'Ie'}ll"e.
I understand that I must submit a print copy of my thesis or dissertation to the RIT Archives, per current RIT guidelines for the completion of my degree. I hereby grant to the Rochester Institute of Technology and its agents the non--exclusive license to archive and make accessible my thesis or dissertation in whole or in part in all fonns of media in perpetuity. 1 retain all other ownership rights to the copyright of the thesis or dissertation. I also retain the right to use in future works (such as articles or books) all or part of this thesis or dissertation.
Print Reproduction Permission Granted:
1. \-\O'fou~fq k..~ ~~
:nereby grant permission to me Rochester hlstitu.!e
Technology to reproduce my print thesis or-dissertation in whole or in part. Any reproduction will not be
for commercial use or profit.
Signature of Author:
Hoyoung Kang
Date:,vt~:2. J;2O'"br
Print Reproduction Permission Denied:
I, bi e\(o u~ Mft I,£.
, hereby deny permission to the RIT Library of the
Rochester Institute of Technology to reproduce my print thesis or dissertation in whole or in part.
Signature of Author: ___________________ Date: _ _ _ __
Inclusion in the RlT Digital Media library Electronic Thesis & Dissertation (ETD) Archive
I,
\:l 0" 0 UN 9 KA ~§
, additionally grant to the Rochester Institute of Technology
Digital Media Library (RlT DML) the non-exclusive license to archive and provide electronic access to
my thesis or dissertation in whole or in part in an form.s.of TTl~dia in perpetuitj'.
I understand that my work, in addition to its bibliographic record and abstract, will be available to the World-wide community of scholars and researchers through the RIT DML. I retain all other ownership rights to the copyright of the thesis ordissertation.· I also retain the right to use in future works (such as articles or books) all or part of this thesis or dissertation. I am aware that the Rochester Institute of Technology does not require registration of copyright for EIDs.
I hereby certify that, if appropriate, I have obtained and attached written permission statements from the owners of each third party copyrighted matter to be included in lIlY thesis or dissertation. I certify that the
Version I submi.tted is ihe san1e as that approved by my cmnmittee.
Signature of Author: Hoyoung Kang Date: May :z. ~06r
DISSERTATION RELEASE PERMISSON ROCHESTER INSTITUTE OF TECHNOLOGY
COLLEGE OF SCIENCE CHESTERF. CARLSON CENTER FOR IMAGING SCIENCE
Title of Dissertation New Approaches in Optical Lithography Technology for Subwavelength Resolution, I hereby grant permission to the Wallace Memorial Library of RI. T. to reproduce my dissertation in whole or in part. Any reproduction will not be for commercial or profit.
Signature Date
Hoyoung Kang
III
NEW APPROACHES IN OPTICAL LITHOGRAPHY TECHNOLOGY FOR
SUBWAVELENGTH RESOLUTION
by Hoyoung Kang
Submitted to the Chester F. Carlson
Center for Imaging Science
College of Science in partial fulfillment of the requirements
for the Ph.D. Degree
at the Rochester Institute of Technology
IV
Abstract
Advances in the semiconductor industry are mainly driven by improvements in optical lithography technology, which have enabled the continual shrinking of integrated circuit devices. However, optical lithography technology is approaching its limit, and within ten years, it may be substituted by new non-optical approaches. These may include Extreme Ultra Violet (EUV) lithography and charged particle beam projection
lithography. While these technologies may have potentially better resolution, they can be very difficult to implement into manufacturing.
During the course of the research presented here, the extension of optical lithography to sub 70nm resolution has been investigated. Since optical lithography is mature and well understood, extending it to allow for higher resolution can dramatically reduce manufacturing difficulties, compared to EUV or charged particle beam projection lithography. A majority of the existing infrastructure, such as photoresist materials,
sources, optics, and photo-masks, remain applicable with the optical methods explored here.
The avenues investigated in this research have concentrated on spatial frequency filtering in alternative Fourier Transform planes, vacuum UV wavelength lithography, and achieving ultra high numerical aperture imaging through the use of liquid immersion imaging. More specifically, novel spatial frequency filtering using angular transmission
filters was developed and demonstrated. Multiple filter designs were proposed, one of
which was successfully fabricated and implemented for lithographic imaging. Spatial
filtering, using angular transmission filtering, proved to enhance the resolution of contact hole images by approximately 20%. Vacuum UV imaging aj the 126nm wavelength was carried out but deemed likely to be less practical for commercial viability due to source, optics, and materials issues. Immersion lithography, using ithe 193nm wavelength ArF excimer laser, was investigated and demonstrated for very high numerical aperture imaging. Requirements for immersion lithography were established, including the necessary design of imaging fluids, optics, sources, and photoresist materials. As a development tool, an interference lithography system was built using the 193nm ArF
excimer laser and water as an immersion fluid. Patterns below 70nm were printed using
the process developed, which has established the potential to extend optical lithography
further than was believed at the onset of this project. This research provides proof of the
concept of extending optical lithography to the 70nm generation and below.
VI
ACKNOWLEDGEMENTS I would like to thank to my advisor Bruce W. Smith for his great help and
opportunity to work in most advanced technology development. Discussions with him
were truly helpful and inspiring for the new potential of technology. I also would like to acknowledge all of research group for discussion and help, especially Anatoly Bourov, Frank C. Cropanese, Yongfa Fan and Lena Zavyalova. Thank all the faculty and staff in
Semiconductor and Microsystem Fabrication Laboratory.
I express my gratitude to Semiconductor Research Corporation for the funding of research, ASML to help printing of wafer for experiments with advanced exposure systems, Tropel for the fabrication of pupil filter and USHIO for the leasing the argon excimer lamp for long period of time.
I thank to my wife and children for their endurance and help during my studying period. Finally to my parents, I have deep appreciation for their devotion and sacrifice to
raise and educate me and my siblings under most difficult situations.
vn
Abbreviations
APSM
Attenuated Phase Shift Mask
ARC BARC CAR CD
Anti-Reflective Coating Bottom Anti Reflective Coating Chemically Amplified Resist
Critical Dimension
CEL
Contrast Enhancement Layer
CMP COMA
Chemical Mechanical Polishing
Cyclo-Olefin Maleic Anhydryde
CVD
Chemical Vapor Deposition
DOF
Depth of Focus
DUV DMSDMA
Deep Ultra Violet
Di Methyl Silazane Di Methyl Amine
EPL EUV
Electron Beam Projection Lithography
Extreme Ultra Violet
HMDS
Hex Methyl Di Silazane
MLR
Multi Layer Resist
NA
Numerical Aperture
OAI
Off Axis Illumination
PEB
Post Exposure Bake
PHS PMMA PSM
Poly Hydroxy Styrene Poly Methyl Metha-Aerylate
Phase Shift Mask
RET
Resolution Enhancement Technique
TARC TSI VEMA
Top Anti Reflective Coating Top Surface Imaging
Vinyl Ether Maleic Anhydryde
vuv
Vacuum Ultra Violet
vni
RIT Scholar Works
Theses 5-2005
New approaches in optical lithography technology for subwavelength resolution
Hoyoung Kang
Follow this and additional works at: https://scholarworks.rit.edu/theses Recommended Citation Kang, Hoyoung, "New approaches in optical lithography technology for subwavelength resolution" (2005). Thesis. Rochester Institute of Technology. Accessed from This Dissertation is brought to you for free and open access by RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact [email protected]
NEW APPROACHES IN OPTICAL LITHOGRAPHY TECHNOLOGY FOR
SUBWAVELENGTH RESOLUTION
by Hoyoung Kang
M.S. Hanyang University (1987)
A dissertation submitted in partial fulfillment of the requirements for the degree of Ph.D. in the Chester F. Carson Center for Imaging Science
of the College of Science Rochester Institute of Technology
May 2005
Author Accepted by
HoyoungKang Hoyoung Kang .
CHESTER F. CARLSON CENTER FOR IMAGING SCIENCE
COLLEGE OF SCIENCE ROCHESTER INSTITUTE OF TECHNOLOGY
ROCHESTER, NEW YORK
CERTIFICATE OF APPROVAL
Ph. D. DEGREE DISSERTATION
The Ph.D. Degree Dissertation of Hoyoung Kang has been examined and approved
by the dissertation committee as satisfactory for the dissertation requirement for the Ph.D. degree in Imaging Science
Bruce W. Smith
Dr. Bruce W. Smith, Thesis Advisor
Zoran Ninkov
Dr. Zoran Ninkov
M. Kotlarchyk
Dr. Michael Kotlarchyk
Paul Michaloski
Paul Michaloski,
Date
Thesis/Dissertation Author Permission Statement
Title of thesis or dissertation: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _---;-_ _ __
N eu.l I'>.pproecb 1'0 OptIc 0..0 (!'t-b03k=A.phJ Te.cb'Y>C)lo~ y
Nrumeofauthor: ____H_D~y~o_U__~_~~__~~~~~~~~_ _ _ _ _ _ _ _ _ _ _~_ _ __
Degree:
ph. D
Program: College:
of h1!0%i'llg Se~ e ... r-q
CoUe.g.e
$C'Ie'}ll"e.
I understand that I must submit a print copy of my thesis or dissertation to the RIT Archives, per current RIT guidelines for the completion of my degree. I hereby grant to the Rochester Institute of Technology and its agents the non--exclusive license to archive and make accessible my thesis or dissertation in whole or in part in all fonns of media in perpetuity. 1 retain all other ownership rights to the copyright of the thesis or dissertation. I also retain the right to use in future works (such as articles or books) all or part of this thesis or dissertation.
Print Reproduction Permission Granted:
1. \-\O'fou~fq k..~ ~~
:nereby grant permission to me Rochester hlstitu.!e
Technology to reproduce my print thesis or-dissertation in whole or in part. Any reproduction will not be
for commercial use or profit.
Signature of Author:
Hoyoung Kang
Date:,vt~:2. J;2O'"br
Print Reproduction Permission Denied:
I, bi e\(o u~ Mft I,£.
, hereby deny permission to the RIT Library of the
Rochester Institute of Technology to reproduce my print thesis or dissertation in whole or in part.
Signature of Author: ___________________ Date: _ _ _ __
Inclusion in the RlT Digital Media library Electronic Thesis & Dissertation (ETD) Archive
I,
\:l 0" 0 UN 9 KA ~§
, additionally grant to the Rochester Institute of Technology
Digital Media Library (RlT DML) the non-exclusive license to archive and provide electronic access to
my thesis or dissertation in whole or in part in an form.s.of TTl~dia in perpetuitj'.
I understand that my work, in addition to its bibliographic record and abstract, will be available to the World-wide community of scholars and researchers through the RIT DML. I retain all other ownership rights to the copyright of the thesis ordissertation.· I also retain the right to use in future works (such as articles or books) all or part of this thesis or dissertation. I am aware that the Rochester Institute of Technology does not require registration of copyright for EIDs.
I hereby certify that, if appropriate, I have obtained and attached written permission statements from the owners of each third party copyrighted matter to be included in lIlY thesis or dissertation. I certify that the
Version I submi.tted is ihe san1e as that approved by my cmnmittee.
Signature of Author: Hoyoung Kang Date: May :z. ~06r
DISSERTATION RELEASE PERMISSON ROCHESTER INSTITUTE OF TECHNOLOGY
COLLEGE OF SCIENCE CHESTERF. CARLSON CENTER FOR IMAGING SCIENCE
Title of Dissertation New Approaches in Optical Lithography Technology for Subwavelength Resolution, I hereby grant permission to the Wallace Memorial Library of RI. T. to reproduce my dissertation in whole or in part. Any reproduction will not be for commercial or profit.
Signature Date
Hoyoung Kang
III
NEW APPROACHES IN OPTICAL LITHOGRAPHY TECHNOLOGY FOR
SUBWAVELENGTH RESOLUTION
by Hoyoung Kang
Submitted to the Chester F. Carlson
Center for Imaging Science
College of Science in partial fulfillment of the requirements
for the Ph.D. Degree
at the Rochester Institute of Technology
IV
Abstract
Advances in the semiconductor industry are mainly driven by improvements in optical lithography technology, which have enabled the continual shrinking of integrated circuit devices. However, optical lithography technology is approaching its limit, and within ten years, it may be substituted by new non-optical approaches. These may include Extreme Ultra Violet (EUV) lithography and charged particle beam projection
lithography. While these technologies may have potentially better resolution, they can be very difficult to implement into manufacturing.
During the course of the research presented here, the extension of optical lithography to sub 70nm resolution has been investigated. Since optical lithography is mature and well understood, extending it to allow for higher resolution can dramatically reduce manufacturing difficulties, compared to EUV or charged particle beam projection lithography. A majority of the existing infrastructure, such as photoresist materials,
sources, optics, and photo-masks, remain applicable with the optical methods explored here.
The avenues investigated in this research have concentrated on spatial frequency filtering in alternative Fourier Transform planes, vacuum UV wavelength lithography, and achieving ultra high numerical aperture imaging through the use of liquid immersion imaging. More specifically, novel spatial frequency filtering using angular transmission
filters was developed and demonstrated. Multiple filter designs were proposed, one of
which was successfully fabricated and implemented for lithographic imaging. Spatial
filtering, using angular transmission filtering, proved to enhance the resolution of contact hole images by approximately 20%. Vacuum UV imaging aj the 126nm wavelength was carried out but deemed likely to be less practical for commercial viability due to source, optics, and materials issues. Immersion lithography, using ithe 193nm wavelength ArF excimer laser, was investigated and demonstrated for very high numerical aperture imaging. Requirements for immersion lithography were established, including the necessary design of imaging fluids, optics, sources, and photoresist materials. As a development tool, an interference lithography system was built using the 193nm ArF
excimer laser and water as an immersion fluid. Patterns below 70nm were printed using
the process developed, which has established the potential to extend optical lithography
further than was believed at the onset of this project. This research provides proof of the
concept of extending optical lithography to the 70nm generation and below.
VI
ACKNOWLEDGEMENTS I would like to thank to my advisor Bruce W. Smith for his great help and
opportunity to work in most advanced technology development. Discussions with him
were truly helpful and inspiring for the new potential of technology. I also would like to acknowledge all of research group for discussion and help, especially Anatoly Bourov, Frank C. Cropanese, Yongfa Fan and Lena Zavyalova. Thank all the faculty and staff in
Semiconductor and Microsystem Fabrication Laboratory.
I express my gratitude to Semiconductor Research Corporation for the funding of research, ASML to help printing of wafer for experiments with advanced exposure systems, Tropel for the fabrication of pupil filter and USHIO for the leasing the argon excimer lamp for long period of time.
I thank to my wife and children for their endurance and help during my studying period. Finally to my parents, I have deep appreciation for their devotion and sacrifice to
raise and educate me and my siblings under most difficult situations.
vn
Abbreviations
APSM
Attenuated Phase Shift Mask
ARC BARC CAR CD
Anti-Reflective Coating Bottom Anti Reflective Coating Chemically Amplified Resist
Critical Dimension
CEL
Contrast Enhancement Layer
CMP COMA
Chemical Mechanical Polishing
Cyclo-Olefin Maleic Anhydryde
CVD
Chemical Vapor Deposition
DOF
Depth of Focus
DUV DMSDMA
Deep Ultra Violet
Di Methyl Silazane Di Methyl Amine
EPL EUV
Electron Beam Projection Lithography
Extreme Ultra Violet
HMDS
Hex Methyl Di Silazane
MLR
Multi Layer Resist
NA
Numerical Aperture
OAI
Off Axis Illumination
PEB
Post Exposure Bake
PHS PMMA PSM
Poly Hydroxy Styrene Poly Methyl Metha-Aerylate
Phase Shift Mask
RET
Resolution Enhancement Technique
TARC TSI VEMA
Top Anti Reflective Coating Top Surface Imaging
Vinyl Ether Maleic Anhydryde
vuv
Vacuum Ultra Violet
vni